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Volumn 47, Issue 12, 2008, Pages 8779-8782

Measurement of junction temperature in a nitride light-emitting diode

Author keywords

GaN; Heat flow; Junction temperature; LED; Thermal conductivity

Indexed keywords

CURRENT DENSITY; FLOW MEASURING INSTRUMENTS; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAT FLUX; HEAT TRANSFER; LIGHT; LIGHT EMISSION; NITRIDES; SEMICONDUCTING GALLIUM; SUBSTRATES; THERMAL CONDUCTIVITY; THERMAL INSULATING MATERIALS; THERMOANALYSIS; THERMODYNAMIC PROPERTIES;

EID: 59349095805     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8779     Document Type: Article
Times cited : (21)

References (45)
  • 35
    • 59349092252 scopus 로고    scopus 로고
    • Data sheet from Kyocera, a manufacturer of sapphire, Single crystal sapphire [http://global.kyocera.com/prdct/fc/product/pdf/s-c-sapphire. pdf].
    • Data sheet from Kyocera, a manufacturer of sapphire, "Single crystal sapphire" [http://global.kyocera.com/prdct/fc/product/pdf/s-c-sapphire. pdf].
  • 44
    • 4143060723 scopus 로고    scopus 로고
    • H. M. Rosenberg: Proc. Phys. Soc., Sect. A 67 (1954) 837.
    • H. M. Rosenberg: Proc. Phys. Soc., Sect. A 67 (1954) 837.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.