High power light-emitting diode junction temperature determination from current-voltage characteristics

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Keppens, A ^a,b   Ryckaert, W R ^a   Deconinck, G ^b   Hanselaer, P ^a  

^a ODISEE UNIVERSITY COLLEGE   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DC GENERATORS; DIODES; ENERGY GAP; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

ALTERNATIVE METHODS; BANDGAP; BULK SEMICONDUCTORS; CALIBRATION MEASUREMENTS; DIODE JUNCTIONS; DRIVE CURRENTS; ELECTRICAL CHARACTERISTICS; FORWARD VOLTAGES; HIGH POWERS; JUNCTION TEMPERATURES; LIGHT EMITTING DIODE LEDS; LIMITED CURRENTS; LINEAR TEMPERATURE DEPENDENCES; OPTICAL-; REFERENCE POINTS; THERMAL RESISTANCES; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 56349138722     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3009966     Document Type: Article

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