A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline

Synthetic Metals

Volumn 159, Issue 19-20, 2009, Pages 2117-2121

  Jung, Yunoh ^a   Baeg, Kang Jun ^b   Kim, Dong Yu ^b   Someya, Takao ^c   Park, Soo Young ^a  

^a Seoul National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Air stability; n Type semiconductor; Naphthalene diimide; Thermal stability

Indexed keywords

AIR STABILITY; AIR-STABLE; BENZYLIC; ELECTRONWITHDRAWING; IMIDE DERIVATIVES; N-TYPE ORGANIC SEMICONDUCTOR; N-TYPE SEMICONDUCTOR; N-TYPE SEMICONDUCTORS; NAPHTHALENE DIIMIDE; THERMAL RESISTANCE; THERMAL STABILITY; TRIFLUOROMETHYL;

ELECTRON MOBILITY; SEMICONDUCTING ORGANIC COMPOUNDS; THERMODYNAMIC STABILITY;

NAPHTHALENE;

EID: 70349619888     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.08.004     Document Type: Article

References (23)

1. Dimitrakopoulos C.D., and Malenfant P.R.L. Adv. Mater. 14 (2002) 99
2. Jones B.A., Facchetti A., Marks T.J., and Wasielewski M.R. Chem. Mater. 19 (2007) 2703
3. Sheats J.R. J. Mater. Res. 19 (2004) 1974
4. Drury C.J., Mutsaers C.M.J., Hart C.M., Matters M., and de Leeuw D.M. Appl. Phys. Lett. 73 (1998) 108
5. Greenham N.C., Moratti S.C., Bradley D.D.C., Friend R.H., and Holmes A.B. Nature 365 (1993) 628
6. Lin Y.Y., Dodabalapur A., Sarpeshkar R., Bao Z., Li W., Baldwin K., Raju V.R., and Katz H.E. Appl. Phys. Lett. 74 (1999) 2714
7. Horowitz G. Adv. Mater. 10 (1998) 365
8. Klauk H., Halik M., Zschieschang U., Schmid G., Radlik W., and Weber W. J. Appl. Phys. 92 (2002) 5259
9. Sundar V.C., Zaumseil J., Podzorov V., Menard E., Willett R.L., Someya T., Gershenson M.E., and Rogers J.A. Science 303 (2004) 1644
10. Bao Z. Adv. Mater. 12 (2000) 227
11. Haddon R.C. J. Am. Chem. Soc. 118 (1996) 3042
12. Horowitz G., Kouki F., Spearman P., Fichou D., Nogues C., Pan X., and Garnier F. Adv. Mater. 8 (1996) 242
13. Jones B.A., Facchetti A., Wasielewski M.R., and Marks T.J. J. Am. Chem. Soc. 129 (2007) 15259
14. Wang Z., Kim C., Facchetti A., and Marks T.J. J. Am. Chem. Soc. 129 (2007) 13362
15. Anthopoulos T.D., Anyfantis G.C., Papavassiliou G.C., and de Leeuw D.M. Appl. Phys. Lett. 90 (2007) 122105
16. Jones B.A., Ahrens M.J., Yoon M.H., Facchetti A., Marks T.J., and Wasielewski M.R. Angew. Chem. Int. Ed. 43 (2004) 6363
17. Chen H.Z., Ling M.M., Mo X., Shi M.M., Wang M., and Bao Z. Chem. Mater. 19 (2007) 816
18. Schmidt R., Ling M.M., Oh J.H., Winkler M., Konemann M., Bao Z.N., and Würthner F. Adv. Mater. 19 (2007) 3692
19. Weitz R.T., Amsharov K., Zschieschang U., Villas E.B., Goswami D.K., Burghard M., Dosch H., Jansen M., Kern K., and Klauk H. J. Am. Chem. Soc. 130 (2008) 4637
20. Katz H.E., Lovinger A.J., Johnson J., Kloc C., Siegrist T., Li W., Lin Y.Y., and Dodabalapur A. Nature 404 (2000) 478
21. See K.C., Landis C., Sarjeant A., and Katz H.E. Chem. Mater. 20 (2008) 3609
22. Horowitz G., and Hajlaoui M.E. Adv. Mater. 12 (2000) 1046
23. Di Carlo A., Piacenza F., Bolognesi A., Stadlober B., and Maresch H. Appl. Phys. Lett. 86 (2005) 263501