Band-edge aligned quaternary carrier barriers in InGaAs-AlGaAs high-power diode lasers for improved high-temperature operation

IEEE Journal of Quantum Electronics

Volumn 38, Issue 1, 2002, Pages 67-72

  Wiedmann, Nicolas ^b,c   Schmilz, Johannes ^b,c   Boucke, Konstantin ^b,c   Herres, Nikolaus ^b,c   Wagner, Joachim ^b,c   Mikulla, Michael ^b,c   Poprawe, Reinhart ^b,c   Weimann, Günter ^a,b,c  

^a IEEE

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c FRAUNHOFER INSTITUTE FOR LASER TECHNOLOGY   (Germany)

Author keywords

Carrier blocking layer; Characteristic temperature; High power diode laser; InGaAs AlGaAs laser; Thermionic emission; Vertical carrier leakage

Indexed keywords

HIGH POWER LASERS; HIGH TEMPERATURE OPERATIONS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; THERMIONIC EMISSION; THERMODYNAMIC STABILITY;

ALUMINUM GALLIUM ARSENIDE; CARRIER BLOCKING LAYER; CARRIER LEAKAGE; FREE CARRIER ABSORPTION; VOLTAGE DROP;

QUANTUM WELL LASERS;

EID: 0036183320     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.973321     Document Type: Article

References (18)

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