High-speed modulation of InGaAs: Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-μm emission wavelength

IEEE Photonics Technology Letters

Volumn 17, Issue 3, 2005, Pages 528-530

  Kuo, H C ^a   Chang, Y H ^a   Yao, H H ^a   Chang, Y A ^a   Lai, F I ^a   Tsai, M Y ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Characterization; InGaAsSb; Laser diodes; Metal organic chemical vapor deposition (MOCVD); Optical fiber devices; Semiconducting

Indexed keywords

CHARACTERIZATION; ELECTRIC CURRENTS; FIBER LASERS; LIGHT EMISSION; LIGHT MODULATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY;

EMISSION WAVELENGTH; GALLIUM ARSENIDE PHOSPHIDE; HIGH SPEED MODULATION; MODULATION FREQUENCY RESPONSE; OPTICAL FIBER DEVICES; THRESHOLD CURRENT CHANGES; VERTICAL CAVITY SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 14844352900     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.840042     Document Type: Article

References (9)

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