MOVPE growth of tunable DBR laser diode emitting at 1060 nm

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 676-680

  Bugge, F ^a   Knauer, A ^a   Zeimer, U ^a   Sebastian, J ^a   Smirnitski, V B ^a   Klehr, A ^a   Erbert, G ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

DBR laser diode; MOVPE; Strained InGaAs QW

Indexed keywords

CURRENT DENSITY; DIFFRACTION GRATINGS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTOR (DBR) LASERS;

SEMICONDUCTOR LASERS;

EID: 0032477140     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00577-6     Document Type: Article

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