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Volumn 22, Issue 3, 2004, Pages 961-965
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Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CLADDING (COATING);
FERMI LEVEL;
HEAT CONDUCTION;
LEAKAGE CURRENTS;
PHOTOLUMINESCENCE;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTOR JUNCTIONS;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR QUANTUM WELLS;
THERMAL EFFECTS;
AUGUR RECOMBINATIONS;
CONDUCTION BAND (CB);
ELECTRON-STOP LAYERS (ESL);
FIBER TELECOMMUNICATION;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 3242716058
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1715086 Document Type: Article |
Times cited : (5)
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References (15)
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