High-brightness tapered lasers with an Al-free active region at 1060 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7230, Issue , 2009, Pages

  Ruiz, M ^a   Odriozola, H ^b   Kwok, C H ^c   Michel, N ^a   Calligaro, M ^a   Lecomte, M ^a   Parillaud, O ^a   Krakowski, M ^a   Tijero, J M G ^b   Esquivias, I ^b   Penty, R V ^c   White, L H ^c  

^a ALCATEL THALES III V LAB   (France)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Diode lasers; Modulation

Indexed keywords

1060 NM; ACTIVE REGIONS; AL-FREE; BROAD-AREA LASERS; DIODE LASERS; DISPLAY APPLICATIONS; DYNAMIC REGIMES; EXTINCTION RATIOS; FREE-SPACE OPTICAL COMMUNICATIONS; FREQUENCY-DOUBLING; GREEN LIGHTS; HIGH BRIGHTNESS; HIGH-POWER; INTERNAL QUANTUM EFFICIENCIES; LASER STRUCTURES; MODULATION EFFICIENCIES; OPTICAL MODULATIONS; OPTICAL POWER; OUTPUT POWER; RECORD VALUES; TAPERED LASERS; TRANSPARENCY CURRENT DENSITIES; WALL-PLUG EFFICIENCIES;

ALUMINUM; DIODES; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; LASERS; MODULATION; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR LASERS;

EID: 63449118688     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.808427     Document Type: Conference Paper

References (5)

1. Michel N. et al., "High modulation efficiency and high power 1060 nm tapered lasers with separate contacts", Electronics letters, 45(2), 103-104 (2009)
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3. Kelemen M. T. et al., "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electronics Lett., 41(18), 1011-1013 (2005).
4. Odriozola H. et al., "Design of 1060 nm Tapered Lasers with Separate Contacts", Optical and Quantum Electronics, in press, DOI 10.1007/s 11082-009-9270-9, 2009.
5. Delepine S. et al., "How to Launch 1 W Into Single-Mode Fiber From a Single 1.48-μm Flared Resonator", IEEE J. Quantum Electron., 7(2), 111-122 (2001)