Thermal conductivity measurements and modeling of phase-change GE 2SB2TE5 materials

Nanoscale and Microscale Thermophysical Engineering

Volumn 13, Issue 2, 2009, Pages 88-98

  Yang, Yizhang ^a   Hamann, Hendrik F ^b   Asheghi, Mehdi ^c  

^a ADVANCED MICRO DEVICES   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Stanford University   (United States)

Author keywords

Amorphous state; Crystalline state; Electronic thermal conductivity; Ge2Sb2Te5; Lattice thermal conductivity; Phase change materials; Phase transformations

Indexed keywords

AMORPHOUS STATE; CRYSTALLINE STATE; ELECTRONIC THERMAL CONDUCTIVITY; GE2SB2TE5; LATTICE THERMAL CONDUCTIVITY; PHASE TRANSFORMATIONS;

BUOYANCY; CARBON FIBER REINFORCED PLASTICS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; FLASH MEMORY; GERMANIUM; NONVOLATILE STORAGE; OPTICAL RECORDING; PHASE TRANSITIONS; RANDOM ACCESS STORAGE; TELLURIUM; TELLURIUM COMPOUNDS; THERMAL CONDUCTIVITY; THERMOANALYSIS; THERMOELECTRICITY;

PHASE CHANGE MATERIALS;

EID: 70349515845     PISSN: 15567265     EISSN: None     Source Type: Journal    
DOI: 10.1080/15567260902827909     Document Type: Article

References (24)

1. T. Ohta, M. Birukawa, N. Yamada, and K. Hirao, Optical Recording; Phase-Change and Magneto-Optical Recording, Journal of Magnetism and Magnetic Materials, Vol.242-245, pp. 108-115, 2002.
2. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, Rapid-Phase Transitions of GeTe-Sb2Te3 Pseudobinary Amorphous Thin Films for an Optical Disk Memory, Journal of Applied Physics, Vol.69, pp. 2849-2856, 1991.
3. T. Ohta, N. Akahira, S. Ohara, I. Satoh, High-Density Phase-Change Optical Recording, Optoelectronics Device Technology, Vol.10, pp. 361-380, 1995.
4. E.M. Wright, P.K. Khulbe, andM. Mansuripur, Dynamic Theory of Crystallization inGe2Sb2.3 Te5 Phase-Change Optical Recording Media, Applied Optics, Vol.39, pp. 6695-6701, 2000.
5. T. Jeong, R.Kim, H. Seo, S.Kim, and S.Kim, Crystallization Behavior of Sputter-Deposited Amorphous GeSbTe Thin Films, Journal of Applied Physics, Vol.86, pp. 774-778, 1999.
6. C. Peng and M. Mansuripur, Measurement of the Thermal Conductivity of Erasable Phase- Change Optical Recording Media, Applied Optics, Vol.39, pp. 2347-2352, 2000.
7. J.M. Yáñez-Limón, J. González- Hernández, J.J. Alvarado-Gil, I. Delgadillo, and H. Vargas, Thermal and Electrical Properties of the Ge:Sb:Te System by Photoacoustic and Hall Measurements, Physical Review B, Vol.52, pp. 16321-16324, 1995.
8. D. Wamwangi, W.K. Njoroge, and M. Wuttig, Crystallization Kinetics of Ge4Sb1Te5 Films, Thin Solid Films, Vol.408, pp. 310-315, 2002.
9. N. Yamada and T. Matsunaga, Structure of Laser-Crystallized GeSbTe Sputtered Thin Films for Use in Optical Memory, Journal of Applied Physics, Vol.88, pp. 7020-7028, 2000.
10. Y.J. Park, J.Y. Lee, M.S. Youm, Y.T. Kim, and H.S. Lee, Crystal Structure and Atomic Arrangement of the Metastable Ge2Sb2Te5 Thin Films Deposited on SiO2/Si Substrates by Sputtering Method, Journal of Applied Physics, Vol.97, pp. 093506-093512, 2005.
11. D.G. Cahill and R.O. Pohl, Lattice Vibrations and Heat Transport in Crystals and Glasses, Annual Review of Physical Chemistry, Vol.39, pp. 93-121, 1988.
12. D.G. Cahill, S.K. Watson, and R.O. Pohl, Lower Limit to the Thermal Conductivity of Disordered Crystals, Physical Review B, Vol.46, pp. 6131-6140, 1992.
13. J.M. Ziman, Electrons and Phonons, Oxford University Press, Oxford, 1960.
14. A. Einstein, Elementary Observations on Thermal Molecular Motion in Solids (Elementare Betrachtungen über die thermische Molekularbewegung in festen Körpern). Annalen der Physik, Vol.35, p. 679, 1911.
15. G.A. Slack, The Thermal Conductivity of Nonmetallic Crystals, Solid State Physics: Advances in Research and Applications, Vol.34, p. 1, 1979.
16. E.R. Meinders and C. Peng, Melt-Threshold Method to Determine the Thermal Conductivity of Thin Films in Phase-Change Optical Recording Stacks, Journal of Applied Physics, Vol.93, pp. 3207-3213, 2003.
17. E.K. Kim, S.I. Kwun, S.M. Lee, H. Seo, and J.G. Yoon, Thermal Boundary Resistance at Ge2Sb2Te5/ZnS:SiO2 Interface, Applied Physics Letters, Vol.76, pp. 3864-3866, 2000.
18. V. Giraud, J. Cluzel, V. Sousa, A. Jacquot, A. Dauscher, B. Lenoir, H. Scherrer, and S. Romer, Thermal Characterization and Analysis of Phase Change Random Access Memory, Journal of Applied Physics, Vol.98, pp. 013520-013527, 2005.
19. H.-K. Leyo, D.G. Cahill, B.-S. Lee, J.R. Abelson, M.-H. Kwon, K.-B. Kim, S.G. Bishop, and B.-K. Cheong, Thermal Conductivity of Phase-Change Material Ge2Sb2Te5, Applied Physics Letters, Vol.89, pp. 151904-151907, 2006.
20. H. Hamann, M. O'Boyle, Y.C. Martin, M. Rooks, and K. Wickramasinghe, Ultra-High- Density Phase-Change Storage and Memory, Nature Materials, Vol.5, pp. 383-387, 2006.
21. A.C. Sheila and T.E. Schlesinger, Modeling Thermal Cross Talk and Overwrite Jitter in Growth Dominant Phase Change Optical Recording Media at High Data Rates, Journal of Applied Physics, Vol.91, pp. 2803-2811, 2002.
22. C. Peng and M. Mansuripur, Measurement of the Thermal Coefficients of Rewritable Phase-Change Optical Recording Media, Applied Optics, Vol.41, pp. 361-369, 2002. (Pubitemid 34725796)
23. J. Reifenberg, M.A. Panzer, S. Kim, A.M. Gibby, Y. Zhang, S. Wong, H.-S. Wong, E. Pop, and K.E. Goodson, Thickness and Stoichiometry Dependence of the Thermal Conductivity of GeSbTe Films, Applied Physics Letters, Vol.91, pp. 111904-111907, 2007.
24. I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, and M. Wuttig, Structural Transformations of GeSbTe Films Studied by Electrical Resistance Measurements, Journal of Applied Physics, Vol.87, pp. 4130-4134, 2000.