Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 4909-4912

  Yokoyama, Haruki ^a   Sugiyama, Hiroki ^a   Oda, Yasuhiro ^a   Watanabe, Kazuo ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Delta doping; Diffusion; HEMT; InAlP; InGaAs; InP; MOCVD

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELECTRON MOBILITY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMODYNAMIC STABILITY;

CARRIER SUPPLY LAYERS;

TRANSISTORS;

EID: 0142107422     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4909     Document Type: Article

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