Evaluation of line-edge roughness in Cu/low-k interconnect patterns with CD-SEM

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 225-227

  Yamaguchi, Atsuko ^a   Ryuzaki, Daisuke ^a   Takeda, Ken'ichi ^a   Kawada, Hiroki ^b  

^a HITACHI LTD   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD ENHANCEMENT; LINE EDGE ROUGHNESS; SEM; WEDGE ANGLE;

ELECTRIC PROPERTIES;

EID: 70349445567     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090394     Document Type: Conference Paper

References (14)

1. P. Oldiges, et al., SISPAD 2000, 131(2000).
2. K. Patterson, et al., Proc. SPIE, vol. 4344, 809(2001) .
3. K. K. Young, et al., IEDM Tech. Dig. 2000, 563(2000) .
4. C. H. Diaz, et al., IEEE Electron Device Letters, vol. 22, 287(2001).
5. S. Xiong, et al., Proc. SPIE vol. 4689, 733(2002).
6. T. Linton, et al., IEDM Tech. Dig. 2002, 303(2002).
7. J. A. Croon, et al., IEDM Tech. Dig. 2002, 307(2002).
8. A. Yamaguchi, et al., J. Vac. Sci. Technol. B 23, 2711(2005).
9. W. Steinhogl, et al., Microelectronic Engineering, vol. 76, 126(2004).
10. L. H. A. Leunissen, et al., J. Vacuum. Sci. Technol., B 24, 1859(2006).
11. J. Noguchi, et al., IEDM Tech. Dig. 2003, 21.6.1(2003).
12. M. Tada, et al., IEEE Trans. Electron Devices, vol. 53, 1169(2006).
13. A. T. Kim, et al., Proc. of IITC 2007, 155(2007).
14. M. Stucchi and Z. Toekei, Proc. of IITC 2008, 174(2008).