Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation

Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

  Jasik, A ^a   Muszalski, J ^a   Pierscinski K ^a   Bugajski, M ^a   Talalaev, V G ^b   Kosmala, M ^c  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b MAX BORN INSTITUT   (Germany)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBED POWER; ABSORBING LAYERS; ABSORPTION MODULATION; AS-GROWN; BANDWIDTH LIMITED PULSE; BEAM EQUIVALENT PRESSURE; CARRIER TRAPPING; CRYSTAL QUALITIES; DEVICE PARAMETERS; DIODE-PUMPED; ENHANCEMENT FACTOR; GROUP DELAY DISPERSION; GROUP III; GROWTH CONDITIONS; INGAAS QUANTUM WELLS; INTERFACE SHARPNESS; LOW TEMPERATURES; LOW-TEMPERATURE GROWN; MODE-LOCKED; MODULATION DEPTH; NEAR-SURFACE; NON-SATURABLE LOSS; NONSTOICHIOMETRIC; POSTGROWTH ANNEALING; PUMP PROBE MEASUREMENT; RECOVERY TIME; SATURATION FLUENCE; SELF-STARTING; SEMICONDUCTOR SATURABLE ABSORBER MIRRORS; STABLE MODE LOCKING; TRANSMISSION OUTPUT; TYPE STRUCTURES; V/III RATIO;

ABSORPTION; ANNEALING; CRYSTAL GROWTH; ELECTRON MOBILITY; FIBER LASERS; MIRRORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTIMIZATION; PULSED LASER APPLICATIONS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SUPERCONDUCTING FILMS; YTTERBIUM;

SEMICONDUCTOR GROWTH;

EID: 70349337885     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3211296     Document Type: Article

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