Optical and electro-optical investigation of low-temperature grown GaAs

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 316-319

  Dankowski, S U ^a   Kiesel, P ^a   Ruff, M ^a   Streb, D ^a   Tautz, S ^a   Keil, U D ^b   Sorensen C B ^c   Knupfer B ^a   Kneissl, M ^a   Dohler G H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

Arsenic source; Growth temperature; Low temperature grown GaAs; Optical properties

Indexed keywords

ANNEALING; ARSENIC; BAND STRUCTURE; ELECTROOPTICAL DEVICES; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

HIGH CONTRAST ELECTROOPTICAL MODULATOR;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0001577574     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01748-5     Document Type: Article

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