Nonequilibrium carriers in GaAs grown by low-temperature molecular beam epitaxy

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 8, 2001, Pages

  Ruda, H ^a   Shik, A ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; LOW TEMPERATURE; MODEL; SCREENING; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 4243903844     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.085203     Document Type: Article

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