Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method

Journal of Crystal Growth

Volumn 310, Issue 18, 2008, Pages 4110-4114

  Lin, Yow Jon ^a   Chen, Wei Chung ^a   Chang, Hsing Cheng ^b   Liu, Chia Jyi ^a   Lin, Zhi Ru ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

A1. Defects; A1. Doping; A2. Growth from solutions; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

GELATION; SEMICONDUCTING ZINC COMPOUNDS; SOL-GEL PROCESS; SULFATE MINERALS; ZINC; ZINC ALLOYS; ZINC OXIDE;

A1. DEFECTS; A1. DOPING; A2. GROWTH FROM SOLUTIONS; AL DOPING; B1. ZINC COMPOUNDS; B2. SEMICONDUCTING II-VI MATERIALS; BAND-EDGE LUMINESCENCE; SOL-GEL METHODS; ZNO FILMS;

COLLOIDS;

EID: 49749094000     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.064     Document Type: Article

References (28)

1. Look D.C. Mater. Sci. Eng. B 80 (2001) 383
2. Pearton S.J., Norton D.P., Ip K., Heo Y.W., and Steiner T. Prog. Mater. Sci. 50 (2005) 293
3. Yuen C., Yu S.F., Lau S.P., Rusli, and Chen T.P. Appl. Phys. Lett. 86 (2005) 241111
4. Alivov Y.I., Özgür U., Doǧan S., Liu C., Moon Y., Gu X., Avrutin V., Fu Y., and Morkoç H. Solid-State Electron. 49 (2005) 1693
5. Alivov Y.I., Kalinina E.V., Cherenkov A.E., Look D.C., Ataev B.M., Omaev A.K., Chukichev M.V., and Bagnall D.M. Appl. Phys. Lett. 83 (2003) 4719
6. Jang S., Chen J.J., Ren F., Yang H.S., Han S.Y., Norton D.P., and Pearton S.J. J. Vac. Sci. Technol. B 24 (2006) 690
7. Yang H.S., Han S.Y., Heo Y.W., Baik K.H., Norton D.P., Pearton S.J., Ren F., Osinsky A., Dong J.W., Hertog B., Dabiran A.M., Chow P.P., Chernyak L., Steiner T., Kao C.J., and Chi G.C. Jpn. J. Appl. Phys. 44 (2005) 7296
8. Park S.H.K., Lee J.I., Hwang C.S., and Chu H.Y. Jpn. J. Appl. Phys. 44 (2005) L242
9. Park S.M., Ikegami T., and Ebihara K. Jpn. J. Appl. Phys. 44 (2005) 8027
10. Chen X., Guan W., Fang G., and Zhao X.Z. Appl. Surf. Sci. 252 (2005) 1561
11. Kim K.K., Tampo H., Song J.O., Seong T.Y., Park S.J., Lee J.M., Kim S.W., Fujita S., and Niki S. Jpn. J. Appl. Phys. 44 (2005) 4776
12. Hong R.J., and Jiang X. Appl. Phys. A 84 (2006) 161
13. Kim K.H., Park K.C., and Ma D.Y. J. Appl. Phys. 81 (1997) 7764
14. Xue S.W., Zu X.T., Zheng W.G., Chen M.Y., and Xiang X. Physica B 382 (2006) 201
15. Ghosh R., and Basak D. J. Appl. Phys. 101 (2007) 023507
16. Liu X.C., Shi E.W., Chen Z.Z., Zhang H.W., Xiao B., and Song L.X. Appl. Phys. Lett. 88 (2006) 252503
17. Kang H.S., Kang J.S., Kim J.W., and Lee S.Y. J. Appl. Phys. 95 (2004) 1246
18. Monteiro T., Neves A.J., Carmo M.C., Soares M.J., Peres M., Wang J., Alves E., Rita E., and Wahl U. J. Appl. Phys. 98 (2005) 013502
19. Özgür U., Alivov Y.I., Liu C., Teke A., Reshchikov M.A., Doǧan S., Avrutin V., Cho S.J., and Morkoç H. J. Appl. Phys. 98 (2005) 041301
20. Vanheusden K., Warren W.L., Seager C.H., Tallant D.R., Voigt J.A., and Gnade B.E. J. Appl. Phys. 79 (1996) 7983
21. Ozaki K., and Gomi M. Jpn. J. Appl. Phys. 41 (2002) 5614
22. Gabás M., Gota S., Ramos-Barrado J.R., Sánchez M., Barrett N.T., Avila J., and Sacchi M. Appl. Phys. Lett. 86 (2005) 042104
23. Majumdar H.S., Bolognesi A., and Pal A.J. J. Phys. D: Appl. Phys. 36 (2003) 211
24. Smith S., and Forrest S.R. Appl. Phys. Lett. 84 (2004) 5019
25. Majumdar H.S., Bandyopadhyay A., Bolognesi A., and Pal A.J. J. Appl. Phys. 91 (2002) 2433
26. Lin Y.J. J. Appl. Phys. 103 (2008) 063702
27. Choopun S., Vispute R.D., Yang W., Sharma R.P., Venkatesan T., and Shen H. Appl. Phys. Lett. 80 (2002) 1529
28. Ohtomo A., Kawasaki M., Koida T., Masabuchi K., Koinuma H., Sakurai Y., and Yoshida Y. Appl. Phys. Lett. 72 (1998) 2466