Reciprocal space mapping of x-ray diffraction intensity of GaN-based laser diodes grown on GaN substrates

Materials Research Society Symposium - Proceedings

Volumn 798, Issue , 2003, Pages 799-803

  Tachibana, K ^a   Harada, Y ^a   Saito, S ^a   Nunoue, S ^a   Katsuno, H ^a   Hongo, C ^a   Hatakoshi, G ^a   Onomura, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE; ELECTRIC POWER MEASUREMENT; LATTICE CONSTANTS; LIGHT MEASUREMENT; SAPPHIRE; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; X RAY DIFFRACTION;

EPITAXIAL LAYERS; LASER STRUCTURES; SAPPHIRE SUBSTRATE; SPACE MAPPING;

GALLIUM NITRIDE;

EID: 2942633290     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-798-y5.40     Document Type: Conference Paper

References (5)

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