Effect of attenuated phase shift mask structure on extreme ultraviolet lithography

Japanese Journal of Applied Physics

Volumn 48, Issue 6 PART 2, 2009, Pages

  Shin, Hvun Duck ^a   Jeoung, Chang Young ^a   Kim, Tae Geun ^a   Lee, Sanasul ^a   Park, In Sung ^a   Ann, Jinho ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

13.5 NM; ABSORBER STACKS; ATTENUATED PHASE SHIFT MASKS; CD BIAS; CRITICAL ISSUES; DEEP ULTRAVIOLET; EUV REFLECTIVITY; FABRY-PEROT STRUCTURE; HIGH EFFICIENCY; IMAGE CONTRASTS; LONG-TERM SOLUTIONS; PHASE SHIFT EFFECT; PROCESS WINDOW; SIMULATION TOOL; TECHNOLOGICAL IMPROVEMENTS;

LITHOGRAPHY; PHASE SHIFT; PULSE MODULATION; REFLECTION; TANTALUM COMPOUNDS; ULTRAVIOLET DEVICES;

PHOTOMASKS;

EID: 70249138013     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.06FA06     Document Type: Article

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