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Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

Energy resolved spin dependent tunneling in 1.2 nm dielectrics

(4) Ryan, J T a Lenahan, P M a Krishnan, A T b Krishnan, S b

a PENNSYLVANIA STATE UNIVERSITY (United States)

b TEXAS INSTRUMENTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON PARAMAGNETIC RESONANCE; ENERGY LEVEL; HIGH ELECTRIC FIELDS; INSTABILITY PROBLEMS; INTEGRATED CIRCUITRY; MICROELECTRONICS TECHNOLOGY; SILICON OXYNITRIDES; SOLID STATE ELECTRONICS; SPIN DEPENDENT TUNNELING;

DEFECT STRUCTURES; ELECTRIC FIELDS; MICROELECTRONICS; PARAMAGNETIC RESONANCE; PARAMAGNETISM; POINT DEFECTS; SILICON NITRIDE;

DEFECTS;

EID: 70249136483 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3226633 Document Type: Article

Times cited : (14)

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