Effect of Ce doping on the microstructure and electrical properties of BiFeO3 thin films prepared by chemical solution deposition

Journal of Physics D: Applied Physics

Volumn 42, Issue 11, 2009, Pages

  Liu, Jun ^a   Li, Meiya ^a   Pei, Ling ^a   Yu, Benfang ^a   Guo, Dongyun ^b   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-FATIGUE; CE CONTENTS; CE-DOPING; CHEMICAL SOLUTION DEPOSITION; ELECTRICAL PROPERTY; GLASS SUBSTRATES; OHMIC CONDUCTION; P-E HYSTERESIS LOOPS; REMANENT POLARIZATION;

CERIUM; CERIUM COMPOUNDS; CHEMICALS; DEPOSITION; DIELECTRIC LOSSES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HYSTERESIS; IRON OXIDES; PHASE TRANSITIONS; POLARIZATION; SEMICONDUCTING BISMUTH COMPOUNDS; THIN FILMS;

FILM PREPARATION;

EID: 70249133346     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/11/115409     Document Type: Article

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