Study on the Ce substitution effects of BiFeO3 films on ITO/glass substrates

Journal of Crystal Growth

Volumn 310, Issue 11, 2008, Pages 2934-2937

  Liu, Hongri ^a   Yan, Bowu ^b   Wang, Xiuzhang ^a  

^a HUBEI NORMAL UNIVERSITY   (China)

^b HUBEI POLYTECHNIC UNIVERSITY   (China)

Author keywords

A1. Ce substitution; B1. BiFeO3; B2. Ferroelectricity; B2. Leakage current

Indexed keywords

BISMUTH COMPOUNDS; CERIUM; FERROELECTRICITY; LEAKAGE CURRENTS; SOL-GEL PROCESS; SUBSTITUTION REACTIONS;

BREAKDOWN FIELD; INDIUM TIN OXIDE; RHOMBOHEDRAL PHASE;

THIN FILMS;

EID: 42749090104     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.02.003     Document Type: Article

References (14)

1. Fiebig M. J. Phys. D 38 (2005) 123
2. Eerenstein W., Mathur N.D., and Scott J.F. Nature 442 (2006) 759
3. Wang J., Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Viehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M., Wuttig M., and Ramesh R. Science 299 (2003) 1719
4. Michel C., Moreau J.-M., Achenbach G.D., Gerson R., and James W.J. Solid State Commun. 7 (1969) 701
5. Fuji T., Jinzenji S., Asahara Y., Kajima A., and Shinjo T. J. Appl. Phys. 64 (1988) 5434
6. Iakovlev S., Solterbeck C.-H., Kuhnke M., and Es-Souni M. J. Appl. Phys. 97 (2005) 094901
7. Singh S.K., Kim Y.K., Funakubo H., and Ishiwara H. Appl. Phys. Lett. 88 (2006) 162904
8. Palkar V.R., John J., and Pinto R. Appl. Phys. Lett. 80 (2002) 1628
9. Qi X., Dho J., Tomov R., Blamire M.G., and MacManus-Driscoll J.L. Appl. Phys. Lett. 86 (2005) 062903
10. Das S.R., Bhattacharya P., Choudhary R.N.P., and Katiyar R.S. Appl. Phys. Lett. 99 (2006) 06617
11. Liu H.R., Liu Z.L., Li X.L., Li X.A., and Yao K.L. J. Phys. D 40 (2007) 242
12. Chung C.-F., Lin J.-P., and Wu J.-M. Appl. Phys. Lett. 88 (2006) 242909
13. Uchida H., Ueno R., Funakubo H., and Koda S. J. Appl. Phys. 100 (2006) 014106
14. Lee Y.H., Wu J.M., and Lai C.H. Appl. Phys. Lett. 88 (2006) 042903