Large remanent polarization of cerium-modified bismuth-titanate thin films for ferroelectric random access memories

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1376-1380

  Kim, Kyoung Tae ^a   Kim, Chang Il ^a   Kang, Dong Hae ^a   Shim, Il Wun ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CRYSTAL MICROSTRUCTURE; FERROELECTRIC MATERIALS; FERROELECTRICITY; MORPHOLOGY; PHASE TRANSITIONS; POLARIZATION; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BISMUTH TITANATE; FERROELECTRIC RANDOM ACCESS MEMORY; FERROELECTRIC THIN FILM; METAL-ORGANIC DECOMPOSITION; POLYCRYSTALLINE STRUCTURE; REMANENT POLARIZATION;

THIN FILMS;

EID: 0042029699     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1564038     Document Type: Article

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