Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise

Nanotechnology

Volumn 20, Issue 33, 2009, Pages

  Gokirmak, Ali ^a   Inaltekin, Hazer ^b   Tiwari, Sandip ^b  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT NOISE; CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE MEASUREMENTS; CHARACTERIZATION TECHNIQUES; DIRECT MEASUREMENT; EFFECTIVE ELECTRON MOBILITY; HIGH RESOLUTION; INVERSION LAYER; NANO SCALE; NANO-METER SCALE; NOISE LEVELS; NON-LINEAR; RANDOM FLUCTUATION; STOCHASTIC RESONANCES;

CAPACITANCE; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; MESFET DEVICES; NANOSTRUCTURED MATERIALS; RESONANCE;

FIELD EFFECT TRANSISTORS;

AMBIENT AIR; ARTICLE; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; ENVIRONMENT; FIELD EFFECT TRANSISTOR; NANOANALYSIS; PRIORITY JOURNAL;

EID: 70249118517     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/33/335203     Document Type: Article

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