Refractive index, oscillator parameters and optical band gap of e-beam evaporated Ga10Ge10Te80 films

Journal of Physics D: Applied Physics

Volumn 42, Issue 11, 2009, Pages

  El Gendy, Y A ^a  

^a Helwan University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ANNEALED FILMS; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; CHEMICAL COMPOSITIONS; DIELECTRIC CONSTANTS; DISPERSION PARAMETERS; E BEAM EVAPORATION; EFFECTIVE MASS; GLASS SUBSTRATES; LIGHT INCIDENCE; OPTICAL ABSORPTION SPECTRUM; OSCILLATOR PARAMETERS; REFLECTION SPECTRA; ROOM TEMPERATURE; VACUUM PRESSURE; WAVELENGTH RANGES; X-RAY DIFFRACTION STUDIES;

AMORPHOUS FILMS; ANNEALING; CARRIER CONCENTRATION; ENERGY GAP; GALLIUM; GERMANIUM; LIGHT; LIGHT ABSORPTION; LIGHT REFLECTION; LIGHT REFRACTION; LIGHT TRANSMISSION; OPTICAL BAND GAPS; OPTICAL TRANSITIONS; ORGANIC POLYMERS; REFRACTIVE INDEX; REFRACTOMETERS; TELLURIUM COMPOUNDS; VACUUM EVAPORATION;

OPTICAL FILMS;

EID: 70249117859     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/11/115408     Document Type: Article

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