Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2753-2756

  Lucovsky, Gerald ^a   Phillips, James C ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Amorphous semiconductors; Chalcogenides; Crystallization; Defects; Glass transition; Laser matter interactions; Medium range order; Microcrystallinity; Nano clusters; Nano crystals; Optical properties; Percolation; Reflectivity; Short range order; Synchrotron radiation

Indexed keywords

AMORPHOUS SEMICONDUCTORS; DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; GERMANIUM ALLOYS; GLASS TRANSITION; OPTICAL DEVICES; OPTICAL PROPERTIES; SYNCHROTRON RADIATION;

LASER-MATTER INTERACTIONS; MEDIUM-RANGE ORDER; MICROCRYSTALLINITY; SHORT-RANGE ORDER;

CHALCOGENIDES;

EID: 42649096936     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.059     Document Type: Article

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