Erratum to "Annealing dependence of optical properties of Ga20S75Sb5 and Ga20S40Sb40 thin films" [Thin Solid Films 457 (2004) 253-257] (DOI:10.1016/j.tsf.2003.10.158);Annealing dependence of optical properties of Ga20S 75Sb5 and Ga20S40Sb40 thin films

Thin Solid Films

Volumn 457, Issue 2, 2004, Pages 253-257

  Othman, A A ^a   Osman, M A ^a   Amer, H H ^b   Dahshan, A ^a  

^a Assiut University   (Egypt)

^b NATIONAL CENTER FOR RADIATION RESEARCH AND TECHNOLOGY   (Egypt)

Author keywords

Annealing; Evaporation; Optical properties; X Ray diffraction

Indexed keywords

ANNEALING; CRYSTALLIZATION; EVAPORATION; GLASS TRANSITION; LIGHT REFLECTION; LIGHT TRANSMISSION; OPTICAL SYSTEMS; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ABSORPTION COEFFICIENT; CHALCOGENIDE FILMS; EXOTHERMIC PROCESS; STRUCTURAL CHANGES;

THIN FILMS;

EID: 2342535101     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.053     Document Type: Erratum

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