Ohmic contact and space-charge-limited current in molybdenum oxide modified devices

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 10, 2009, Pages 1806-1809

  Lü, Zhaoyue ^a   Deng, Zhenbo ^a   Zheng, Jianjie ^b   Zou, Ye ^a   Chen, Zheng ^a   Xu, Denghui ^c   Wang, Yongsheng ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b BEIJING JIAOTONG UNIVERSITY   (China)

^c BEIJING TECHNOLOGY AND BUSINESS UNIVERSITY   (China)

Author keywords

Hole mobility; Molybdenum oxide (MoO3); Ohmic contact; Trap state

Indexed keywords

HIGH WORK FUNCTION; HOLE INJECTION; INDIUM TIN OXIDE; INTERFACIAL TRAP STATE; METAL/ORGANIC INTERFACES; MOLYBDENUM OXIDE (MOO3); MOLYBDENUM OXIDES; SPACE-CHARGE LIMITED; SPACE-CHARGE-LIMITED CURRENT; SURFACE INTERACTIONS; TRAP STATE;

AMINES; CARRIER TRANSPORT; ELECTRIC CONTACTORS; ELECTRIC CURRENT MEASUREMENT; MOLYBDENUM; MOLYBDENUM COMPOUNDS; OHMIC CONTACTS; SURFACE TREATMENT; TIN;

HOLE MOBILITY;

EID: 70249092852     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.07.003     Document Type: Article

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