Advanced InP DHBT process for high speed LSI circuits

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Urteaga, M ^a   Pierson, R ^a   Rowell, P ^a   Choe, M ^a   Mensa, D ^a   Brar, B ^a  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Dielectric sidewall spacer; Direct digital synthesizer; Electroplated contacts; InP heterojunction bipolar transistor; Self aligned contacts

Indexed keywords

DIELECTRIC SIDEWALL SPACER; DIRECT DIGITAL SYNTHESIZER; ELECTROPLATED CONTACTS; INP HETEROJUNCTION BIPOLAR TRANSISTOR; SELF-ALIGNED CONTACTS;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; DIGITAL CIRCUITS; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; LSI CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 70149118398     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4703058     Document Type: Conference Paper

References (11)

1. M. Rodwell, M. Le, B. Brar, "InP bipolar ICs: scaling roadmaps, frequency limits, manufacturable technologies," Proceedings of the IEEE, vol. 96, no. 4, April 2008, pp 271-286.
2. b" 2007 IEEE Indium Phosphide and Related Materials Conference, Matsue, Japan, May 2007.
3. max InGaAs/InP DHBT in a novel dry-etched emitter process," 2007 Device Research Conference, South Bend, IN, June 2007.
4. J. Hacker, M. Urteaga, D. Mensa, R. Pierson, M. Jones, Z. Griffith, M. Rodwell, "250nm InP DHBT monolithic amplifiers with 4.8dB gain at 324 GHz," to be preseented 2008 Internation Microwave Symposium, Atlanta, GA, June 15-18, 2008.
5. N. Phan, D. Sawdai, B. Oyama, P. Chang, D. Scott, A. Gutierrez-Aitken, A. Oki, "A 154 GHz static divider ina a 0.25μm InP DHBT technology," 2006 Device Research Conference, State College, PA, June 2006.
6. J. Hallin, T. Kjellberg, T. Swahn, "A 165-Gb/s 4:1 multiplexer in InP DHBT technology," IEEE Journal of Solid State Circuits, vol. 41, no. 10, pp 2209-2214, Oct. 2006.
7. S.E. Turner, D.E. Ketecki, "Direct digital syntesizer with sine-weighted DAC at 32 GHz with InP DHT technology, IEEE Journal of Solid State Circuits, vol. 41, no. 10, pp. 2284-2290, Oct. 2006.
8. M. Urteaga, R. Pierson, P. Rowell, B.Brar, Z. Griffith, M. Dahlstrom, M. Rodwell., S. Lee, N. Nguyen, C. Nguyen, "Wide bandwidth InP DHBT technology utilizing dielectric sidewall spacers," 2004 IEEE Indium Phosphide and Relate Materials Conference, Kagoshima, Japan, May 2004.
9. M. Dahlstrom, X.-M. Fang, D. Lubyshev, M. Urteaga, S. Krishnan, N. Parthasarathy, Y.M. Kim, Y.Wu, J. Fastenau, W.K. Liu, M. Rodwell, Wideband DHBTs using a graded carbon-doped InGaAs base," IEEE Electron Device Letter, vol. 24, no. 7, pp. 433-435, July 2003.
10. K. Baek, E. Merlo, M.J. Choe, A. Yen, M. Sahrling,"A 1.7 GHz 3V direct digital synthesizer with an on-chip DAC in 0.35?m SiGE BiCMOS," 2005 IEEE International Solid State Circuit Conference,
11. S. E. Turner, R. Chan, J. Feng, "ROM-based direct digital synthesizer at 24 GHz clock frqeuncy in InP DHBT technology," accepted for publication IEEE Microwave and Wireless Components Letters.