Comparison between AlN thin films with different crystal orientation for MEMS applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7362, Issue , 2009, Pages

  Ababneh, A ^a   Marchand, G ^a   Seidel, H ^a   Hernando, J ^b   Sanchez Rojas J L ^b   Sokmen U ^c   Peiner, E ^c   Schmid U , ^d  

^a SAARLAND UNIVERSITY   (Germany)

^b UNIVERSITY OF CASTILLA LA MANCHA   (Spain)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Aluminium nitride; Crystal structure; Micro cantilever; Piezoelectric constant; Thin film

Indexed keywords

ALN LAYERS; ALN THIN FILMS; ALUMINIUM NITRIDE; C-AXIS ORIENTATIONS; C-AXIS ORIENTED FILM; CMOS COMPATIBLE; COMPOUND MATERIAL; FABRICATION PROCESS; FITTING PROCEDURE; GRAIN GEOMETRY; GRAIN SHAPES; MEMS APPLICATIONS; MICRO-CANTILEVER; MICRO-CANTILEVERS; OUT-OF-PLANE DISPLACEMENT; PIEZOELECTRIC COEFFICIENT; PIEZOELECTRIC CONSTANT; PIEZOELECTRIC PROPERTY; POLYTEC; SCANNING LASER DOPPLER VIBROMETERS; VERTICAL AXIS;

ACTUATORS; ALUMINUM; ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; MEMS; MICROELECTROMECHANICAL DEVICES; NANOCANTILEVERS; NITRIDES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SMART SENSORS; THIN FILM DEVICES; THIN FILMS;

CRYSTAL ORIENTATION;

EID: 69949163249     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.821858     Document Type: Conference Paper

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