A new buried-oxide-in-drift-region trench MOSFET with improved breakdown voltage

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 990-992

  Saxena, Raghvendra S ^a   Kumar, Jagadesh M ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Breakdown voltage (BV); Buried oxide (BOX); On resistance; Power MOSFET; Trench gate

Indexed keywords

BREAKDOWN VOLTAGE (BV); BURIED OXIDE (BOX); ON-RESISTANCE; POWER MOSFET; TRENCH GATE;

ELECTRIC BREAKDOWN; ELECTRIC FIELDS;

MOSFET DEVICES;

EID: 69949124386     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026918     Document Type: Article

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