Low-energy electron beam induced regrowth of isolated amorphous zones in Si and Ge

Journal of Materials Research

Volumn 11, Issue 9, 1996, Pages 2152-2157

  Jencic I ^a   Robertson, I M ^b  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON BEAMS; GROWTH (MATERIALS); ION BOMBARDMENT; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY; ELECTRONIC EXCITATION; ISOLATED AMORPHOUS ZONES; LOW ENERGY ELECTRON BEAMS; REGROWTH RATE; THRESHOLD DISPLACEMENT VOLTAGE;

AMORPHOUS MATERIALS;

EID: 0030241906     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0274     Document Type: Article

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