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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction

(4) Emoto, T a Ghatak, J b Satyam, P V b Akimoto, K c

a TOYOTA NATIONAL COLLEGE OF TECHNOLOGY (Japan)

b INSTITUTE OF PHYSICS (India)

c NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX DEFECTS; CRITICAL VALUE; CURVE FITTING METHODS; DYNAMICAL DIFFRACTION THEORY; FLUENCES; INTENSITY VARIATIONS; INTERFERENCE FRINGE; LARGE STRAINS; LATTICE SPACING; POSITIONAL RELATIONSHIP; ROCKING CURVES; SI SUBSTRATES; SI(111) SUBSTRATE; STRAIN EVOLUTION; STRAIN PROFILES; SURFACE NORMALS;

CURVE FITTING; DIFFRACTION; ION BOMBARDMENT; ION IMPLANTATION; SILICON; SURFACE DEFECTS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 69749097846 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3202329 Document Type: Article

Times cited : (7)

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