Dielectric degradation mechanism for copper interconnects capped with CoWP

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Tan, T L ^a,b   Gan, C L ^a   Du, A Y ^b   Cheng, C K ^c   Gambino, J P ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COBALT COMPOUNDS; DEGRADATION; ELECTRON EMISSION; SILICA;

DIELECTRIC CAP; INTRAMETAL DIELECTRIC; POOLE-FRENKEL EMISSION;

ELECTRIC BREAKDOWN;

EID: 44349097458     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2929388     Document Type: Article

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