Reliability improvement using buried capping layer in advanced interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 333-337

  Yiang, K Y ^a   Mok, T S ^a   Yoo, W J ^a   Krishnamoorthy, Ahila ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Conduction mechanism; Dielectric breakdown; Interconnects; Leakage current; Low k

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; INTEGRATED CIRCUIT INTERCONNECTS; LEAKAGE CURRENTS; OPTICAL INTERCONNECTS;

BREAKDOWN CHARACTERISTICS; BREAKDOWN STRENGTHS; BURIED CAPPING LAYER; CONDUCTION MECHANISM; INTEGRATION SCHEME; LOW DIELECTRIC CONSTANTS; PROCESS-INDUCED TRAPS; RELIABILITY IMPROVEMENT;

RELIABILITY;

EID: 84932166140     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315347     Document Type: Conference Paper

References (11)

1. M. Bohr, Tech. Digest IEEE Int. Electronic Device Meeting, 241 (1995).
2. R. Tsu, J.W. McPherson, and W.R. McKee, Proceedings of The 38th Annual International Reliability Physics Tymposium, San Jose, CA, 2000, p. 348.
3. J. Noguchi, N. Ohashi, H. Ashihara, J. Yasuda, H. Tamaguchi, N. Owada, K. Takeda, and K. Hinode, Troceedings of the 38th Annual International Reliability Thysics Symposium, San Jose, CA, 2000, p.339.
4. C. Chiang, S.M. Tzeng, G. Raghavan, R. Villasol, G. Bail, T. Bohi, H. Fujimoto, and D. Fraser, IEEE VMC, p. 414 (1994).
5. A.L.S. Loke, J.T. Wetzei, C. Ryu, W.-J. Lee, and S.S. Wong, Tymp. On VLSI Tech. Digest of Tech. Papers, p. 26 (1998).
6. G. Bersuker, V. Blaschke, S. Choi, and D. Wick, Troceedings of the 38th Annual International Reliability Thysics Symposium, San Jose, CA, 2000, p. 344.
7. International Technology Roadmap for Semiconductors, 2003 Edition, Semiconductor International Association, San Tose, CA.
8. K.Y. Yiang, W.J. Yoo, Q. Guo, and Ahila Krishnamoorthy, Tppl. Phys. Lett. 83 (3), 2003, p. 524.
9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p.403.
10. M. Morgan, E.T. Ryan, J.-H. Zhao, C. Hu, T. Cho, and P.S. To, Mater. Sci. Annual Rev., 30, 645 (2000).
11. C. Jin, J.D. Luttmer, D.M. Smith, and T.A. Ramos, MRS Tull., 22 (10), 39 (1997).