Analytical model of radiation response in FDSOI MOSFETS

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 643-644

  McLain, Michael L ^a   Barnaby, Hugh J ^a   Adell, Philippe C ^b  

^a Arizona State University   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Band to band tunneling; Buried oxide; Fully depleted SOI; Oxide trapped charge; Total ionizing dose

Indexed keywords

RELIABILITY;

BAND-TO-BAND TUNNELING; BURIED OXIDE; FULLY-DEPLETED SOI; OXIDE TRAPPED CHARGE; TOTAL IONIZING DOSE;

MOSFET DEVICES;

EID: 51549084433     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558967     Document Type: Conference Paper

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