SCOPUS 정보 검색 플랫폼

Volumn 2005, Issue , 2005, Pages 819-822

SP-SOI: A third generation surface potential based compact SOI MOSFET model

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ITERATIVE METHODS; NANOTECHNOLOGY; POLYSILICON; SIMULATORS; THRESHOLD VOLTAGE;

CIRCUIT SIMULATORS; GEOMETRY EFFECTS; MOSFET MODELS; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 33847125330 PISSN: 08865930 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/CICC.2005.1568795 Document Type: Conference Paper

Times cited : (21)

References (13)

1
- 33847160444
- in press
- J. Watts, et al., Nanotech, 2005 (in press)
- (2005) Nanotech
- Watts, J.¹

2
- 33847114936
- J. Sleight and R. Rios, IEDM Tech. Dig., 143 (1996)
- (1996) IEDM Tech. Dig , vol.143
- Sleight, J.¹ Rios, R.²

3
- 4444281994
- G. Gildenblat, H. Wang, T.-L. Chen, and X. Cai, IEEE J. Solid-State Circuits, 39, 1394 (2004)
- (2004) IEEE J. Solid-State Circuits , vol.39 , pp. 1394
- Gildenblat, G.¹ Wang, H.² Chen, T.-L.³ Cai, X.⁴

4
- 84860437171
- in press
- G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen, Nanotech, 2005 (in press)
- (2005) Nanotech
- Gildenblat, G.¹ Li, X.² Wang, H.³ Wu, W.⁴ van Langevelde, R.⁵ Scholten, A.J.⁶ Smit, G.D.J.⁷ Klaassen, D.B.M.⁸

5
- 33847105623
- MM11 and PSP models are available at
- MM11 and PSP models are available at http://www.semiconductors.philips. com/Philips.Models/mos.models/

6
- 33847160890
- M. Miura-Mattausch and H. Jacobs, Jpn. J. Appl. Phys. Lett., 29, 2279 (1990)
- (1990) Jpn. J. Appl. Phys. Lett , vol.29 , pp. 2279
- Miura-Mattausch, M.¹ Jacobs, H.²

7
- 33847111752
- P. Bendix, P. Rakers, P. Wagh, L. Lemaitre, W. Grabinski, C. McAndrew, X. Gu, and G. Gildenblat, Proc. CICC, 9 (2004)
- (2004) Proc. CICC , vol.9
- Bendix, P.¹ Rakers, P.² Wagh, P.³ Lemaitre, L.⁴ Grabinski, W.⁵ McAndrew, C.⁶ Gu, X.⁷ Gildenblat, G.⁸

8
- 0742286722
- X. Gu, T.-L. Chen, G. Gildenblat, G. Workman, S. Veeraraghavan, S. Shapira, and K. Stiles, IEEE Trans. Electron Devices, 51, 127 (2004)
- (2004) IEEE Trans. Electron Devices , vol.51 , pp. 127
- Gu, X.¹ Chen, T.-L.² Gildenblat, G.³ Workman, G.⁴ Veeraraghavan, S.⁵ Shapira, S.⁶ Stiles, K.⁷

9
- 4344683399
- W. Wu, T.-L. Chen, G. Gildenblat, and C.C. McAndrew, IEEE Trans. Electron Devices, 51, 1196 (2004)
- (2004) IEEE Trans. Electron Devices , vol.51 , pp. 1196
- Wu, W.¹ Chen, T.-L.² Gildenblat, G.³ McAndrew, C.C.⁴

10
- 0035821910
- T-L. Chen and G. Gildenblat, Electronics Letters, 37, 791 (2001)
- (2001) Electronics Letters , vol.37 , pp. 791
- Chen, T.-L.¹ Gildenblat, G.²

11
- 0033698080
- P. Su, S.K.H. Fung, S. Tang, F. Assaderaghi, C. Hu, Proc. CICC, 197 (2000)
- (2000) Proc. CICC , vol.197
- Su, P.¹ Fung, S.K.H.² Tang, S.³ Assaderaghi, F.⁴ Hu, C.⁵

12
- 0031646543
- K. Joardar, K.K. Gullapalli, C.C. McAndrew, M.E. Burnham, and A. Wild, IEEE Trans. Electron Devices, 45, 134 (1998)
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 134
- Joardar, K.¹ Gullapalli, K.K.² McAndrew, C.C.³ Burnham, M.E.⁴ Wild, A.⁵

13
- 33847171141
- W. Shih, R. Rios, P. Packan, K. Mistry, and T. Abbott, IEDM Tech. Dig., 293 (2001)
- (2001) IEDM Tech. Dig , vol.293
- Shih, W.¹ Rios, R.² Packan, P.³ Mistry, K.⁴ Abbott, T.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.