Single fermi level thin-film CMOS on glass: The behavior of enhancement-mode PMOSFETs from cutoff through accumulation

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 1974-1979

  Nassar, Christopher James ^a   Williams, Carlos A Kosik ^b   Dawson Elli, David ^b   Bowman, Robert John ^a  

^a Rochester Institute of Technology   (United States)

^b Corning Incorporated ^*  (United States)

Author keywords

CMOS; Modeling; Semiconductor modeling; Silicon on insulator technology; Thin film transistors

Indexed keywords

BLENDING FUNCTION; CIRCUIT SIMULATORS; CMOS; CRYSTALLINE SILICONS; DC CURRENT; DEPLETION REGION; DEVICE MODELS; DOPING LEVELS; DRAIN VOLTAGE; ENHANCEMENT-MODE; FLAT-BAND VOLTAGE; FULLY DEPLETED; HYPERBOLIC TANGENT; INTERPOLANTS; MEASURED RESULTS; MODELING; MOSFETS; P-MOSFETS; SEMICONDUCTOR MODELING; THIN FILM SILICON; THIN-FILMS; VERILOG;

BLENDING; CIRCUIT SIMULATION; DRAIN CURRENT; ELECTRIC POTENTIAL; GLASS; MICROSENSORS; MOSFET DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SIMULATORS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69549126005     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026111     Document Type: Article

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