Late-news poster: Demonstration of high performance TFTs on silicon-on-glass (SiOG) substrate

Digest of Technical Papers - SID International Symposium

Volumn 38, Issue 1, 2007, Pages 287-289

  Manley, Robert G ^a   Fenger, Germain ^a   Hirschman, Karl D ^a   Couillard, J Gregory ^b   Williams, Carlo Kosik ^b   Dawson Elli, David ^b   Cites, Jeffrey ^b  

^a Rochester Institute of Technology   (United States)

^b Corning Incorporated ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; GLASS; LEAKAGE CURRENTS; SILICON;

SILICON-ON-GLASS (SIOG); SYSTEM-ON-PANEL INTEGRATION;

THIN FILM TRANSISTORS;

EID: 34547909685     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.2785286     Document Type: Conference Paper

References (3)

1. J. G. Couillard, K. P. Gadkaree, and J. F. Mach, "Glass-Based SOI Structures," US Patent 7176528B2
2. Karl D. Hirschman et. al. "Low Temperature Dopant Activation for Applications in Thin-Film Silicon"; 16th Biennial University Government Industry Microelectronics Symposium; San Jose State University, San Jose, CA; June 25 - June 28, 2006.
3. F. Klaassen. And W. Hess, "Compensated MOSFET devices," Solid-State Electronics, vol. 28, pp. 359-373 1985.