Towards unification of MOS compact models with the unified regional approach

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 1193-1197

  Zhou, Xing ^a   Chandrasekaran, Karthik ^a   See, Guan Huei ^a   Zhu, Zhaomin ^a   Lim, Guan Hui ^a   Lin, Shihuan ^a   Wei, Chengqing ^a   Chiah, Siau Ben ^b   Cheng, Michael ^b   Chu, Sanford ^b   Hsia, Liang Choo ^b   Rustagi, Subhash ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; FUNCTION EVALUATION; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; TOPOLOGY; VLSI CIRCUITS;

ASYMPTOTICALLY PHYSICAL SOLUTIONS; CIRCUIT SIMULATORS; ULTRA THIN BODY (UTB); UNIFIED REGIONAL MODELING (URM);

MOSFET DEVICES;

EID: 34547267355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306073     Document Type: Conference Paper

References (11)

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10. W. Shangguan, X. Zhou, K. Chandrasekaran, Z. Zhu, S. C. Rustagi, S. B. Chiah, and G. H. See, submitted for publication.
11. Z. M. Zhu, X. Zhou, K. Chandrasekaran, G. H. See, and S. C. Rustagi, "A continuous, explicit drain-current model for asymmetric undoped double-gate MOSFETs," to appear in Proc. SSDM2006, Tokyo, Japan, Sept. 2006.