Current-voltage characteristics from an asymptotic analysis of the MOSFET equations

Journal of Engineering Mathematics

Volumn 39, Issue 1, 2001, Pages 25-46

  Cumberbatch, Ellis ^a   Abebe, Henok ^a   Morris, Hedley ^b  

^a CLAREMONT GRADUATE UNIVERSITY   (United States)

^b SAN JOSE STATE UNIVERSITY   (United States)

Author keywords

Asymptotic analysis; Comparison with data; MOSFET current voltage formulae; Semiconductor modeling

Indexed keywords

APPROXIMATION THEORY; ASYMPTOTIC STABILITY; ELECTRIC POTENTIAL; PERTURBATION TECHNIQUES;

DEVICE GEOMETRIES;

MOSFET DEVICES;

SEMICONDUCTOR;

EID: 0035044227     PISSN: 00220833     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004818028105     Document Type: Article

References (14)

1. Asymptotic methods for metal oxide semiconductor field effect transistor modeling
2. Singular perturbations and a free boundary problem in the modeling of field-effect transistors
3. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
4. Simplified long channel MOSFET theory
5. Modelling short channel MOSFETS for use in VLSI
6. An analysis of semiconductor P-N junctions
7. A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices
8. An algorithm for least-squares estimation of nonlinear parameters
9. Singular perturbation techniques: A comparison of the method of matched asymptotic expansions with that of multiple scales