Subthreshold characteristic of double-gate accumulation-mode SOI PMOSFET

IEEE 2007 International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE

Volumn , Issue , 2007, Pages 1446-1449

  Zhengfan, Zhang ^a,b   Zhaoji, Li ^a   Kaizhou, Tan ^b   Jiabin, Zhang ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NLAIC ^*  (China)

Author keywords

Analytical model; Double gate accumulation mode; SOI MOSFET; Subthreshold swing

Indexed keywords

ANALYTICAL MODELS;

ACCUMULATION MODES; DEPLETION APPROXIMATION; GATE OXIDE CAPACITANCE; INTERFACE TRAP DENSITY; POSSION'S EQUATIONS; SOI-MOSFETS; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD SWING;

MOSFET DEVICES;

EID: 47649095696     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MAPE.2007.4393552     Document Type: Conference Paper

References (3)

1. O. Faynot, S. Cristoloveanu, and A. J. Auberton-Herve, "Performance and Potential of Ultrathin Accumulation-Mode SIMOX MOSFET's," IEEE Trans. Electron Device, vol.42, pp. 713-718, April 1995.
2. J. P. Colinge, D. FLANDRE, and F. VAN DE WIELE, "Subthreshold slope of long-channel accumulation-mode P-channel SOI MOSFETS," Solid-state Electronics, vol.37, pp.289-293, February 1994.
3. Winokur P. S, Schwank J.R, and Mcwhortor P.J., "Correlating the radiation response of MOS Capacitors and transistor," IEEE Trans. Nucl. Sci. vol.31, pp.1453-1458, August 1984.