SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 9, 2007, Pages

Fabrication and characterization of metal-oxide-nitride-oxynitride- polysilicon nonvolatile semiconductor memory device with silicon oxynitride (Si Ox Ny) as tunneling layer on glass

(13) Jung, Sungwook a Kim, Jaehong a Son, Hyukjoo a Hwang, Sunghyun a Jang, Kyungsoo a Lee, Jungin a Lee, Kwangsoo a Park, Hyungjun a Kim, Kyunghae a Yi, Junsin a Chung, Hokyoon b Choi, Byoungdeog b Lee, Kiyong b

a Sungkyunkwan University (South Korea)

b Samsung SDI (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GLASS; NONVOLATILE STORAGE; POLYSILICON; SILICON COMPOUNDS; THIN FILM TRANSISTORS;

CHARGE RETENTION; REACTIVE GAS; SILICON OXYNITRIDE; TUNNELING LAYER;

SEMICONDUCTOR STORAGE;

EID: 36248962585 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2802201 Document Type: Article

Times cited : (18)

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