Simulation of the electric response of DNA translocation through a semiconductor nanopore-capacitor

Nanotechnology

Volumn 17, Issue 3, 2006, Pages 622-633

  Gracheva, Maria E ^a   Xiong, Anlin ^a   Aksimentiev, Aleksei ^a   Schulten, Klaus ^a   Timp, Gregory ^a   Leburton, Jean Pierre ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DNA; ELECTRODES; ELECTROLYSIS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MOS DEVICES; NANOSTRUCTURED MATERIALS; POISSON EQUATION; SEMICONDUCTOR MATERIALS;

MULTI-SCALE/MULTI-MATERIAL COMPUTATIONAL MODEL; NANOSCALE ARTIFICIAL MEMBRANE; THREE-DIMENSIONAL POISSON EQUATION; TRANSLOCATING DNA;

CAPACITORS;

EID: 31044443423     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/3/002     Document Type: Article

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