Computer modeling of MWIR single heterojunction photodetector based on mercury cadmium telluride

Infrared Physics and Technology

Volumn 52, Issue 5, 2009, Pages 196-203

  Saxena, P K ^a,b   Chakrabarti, P ^b  

^a DR A P J ABDUL KALAM TECHNICAL UNIVERSITY   (India)

^b BANARAS HINDU UNIVERSITY   (India)

Author keywords

ATLAS; Heterojunction; HgCdTe MCT; MWIR; Photodetector

Indexed keywords

ATLAS; BIASING CONDITIONS; COMPUTER MODELING; DETECTIVITY; DOPING CONCENTRATION; ELECTRIC FIELD PROFILES; ENERGY BAND; ENERGY-BAND DIAGRAM; HETEROJUNCTION PHOTODETECTORS; HETEROSTRUCTURES; HGCDTE-MCT; MERCURY CADMIUM TELLURIDE; MIDINFRARED; MINORITY CARRIER; MWIR; NYQUIST; OPERATING WAVELENGTH; OPTICAL CHARACTERIZATION; P-N JUNCTION; PERFORMANCE RATINGS; POTENTIAL BARRIERS; RESISTANCE-AREA PRODUCTS; REVERSE VOLTAGES; ROOM TEMPERATURE; SEMI-ANALYTICAL; SIMULATED RESULTS; SIMULATION STUDIES; VALANCE BANDS; ZERO-BIAS RESISTANCE AREA PRODUCT;

BAND STRUCTURE; CADMIUM; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON AFFINITY; HETEROJUNCTIONS; INFRARED DEVICES; MERCURY (METAL); MERCURY COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS; TELLURIUM COMPOUNDS;

QUANTUM EFFICIENCY;

EID: 69549092353     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2009.07.009     Document Type: Article

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