Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors

Infrared Physics and Technology

Volumn 49, Issue 3 SPEC. ISS., 2007, Pages 173-182

  Piotrowski, A ^a   Madejczyk, P ^b   Gawron, W ^b   Klos K ^a   Pawluczyk, J ^a   Rutkowski, J ^b   Piotrowski, J ^a   Rogalski, A ^b  

^a VIGO SYSTEM S A   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

HgCdTe ternary alloy; MOCVD growth; Room temperature photovoltaic devices

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; TERNARY SYSTEMS;

ETHYL IODINE (EI); MULTILAYER HETEROSTRUCTURES; PHOTOVOLTAIC DETECTORS; UNCOOLED INFRARED PHOTODETECTORS;

HETEROJUNCTIONS;

EID: 33846008053     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2006.06.026     Document Type: Article

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