Three-dimensional semiconductor device simulation by finite element method coupled to monte carlo method

IEEE Transactions on Magnetics

Volumn 34, Issue 5 PART 1, 1998, Pages 2525-2528

  Hadji, D ^a,b   Marechal Y ^a   Zimmermann, J ^a,b  

^a ENSIEG   (France)

^b Grenoble INP Phelma   (France)

Author keywords

Charge density; Current density; Finite element method; Monte carlo method; Short channel devices

Indexed keywords

EID: 33747964057     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.717582     Document Type: Article

References (6)

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