Numerical simulation of time resolved charge transport in semiconductor structures for electronic devices

Journal of Computational Electronics

Volumn 5, Issue 2-3, 2006, Pages 211-215

  Citarella, G ^a   Fahrner, W R ^b   Neitzert, H C ^c   Wunsch F ^a   Kunst, M ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF HAGEN   (Germany)

^c UNIVERSITY OF SALERNO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; CHARGE CARRIERS; FINITE DIFFERENCE METHOD; LASER EXCITATION; POISSON EQUATION; TIME DOMAIN ANALYSIS;

CHARGE TRANSPORT IN SEMICONDUCTORS; LASER PULSE EXCITATION; MOBILITIES OF ELECTRON; RECOMBINATION VELOCITY; SEMICONDUCTOR PARAMETERS; SHOCKLEY-READ-HALL RECOMBINATIONS; SIMULATION PROGRAM; SURFACE RECOMBINATION VELOCITIES;

SEMICONDUCTOR DEVICES;

EID: 85001969676     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-8846-x     Document Type: Article

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