CMOS-SOI-MEMS transistor for uncooled IR imaging

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 1935-1942

  Gitelman, L ^a   Stolyarova, S ^a   Bar Lev, S ^a   Gutman, Z ^a   Ochana, Y ^a   Nemirovsky, Yael ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

CMOS; Infrared (IR) detectors; Microelectro mechanical; MOS transistors; Silicon oninsulator (SOI); System (MEMS)

Indexed keywords

CMOS; INFRARED (IR) DETECTORS; MICROELECTRO-MECHANICAL; MOS TRANSISTORS; SILICON-ONINSULATOR (SOI); SYSTEM (MEMS);

AMORPHOUS SILICON; COMPOSITE MICROMECHANICS; ELECTRIC POTENTIAL; INFRARED DETECTORS; MEMS; MICROELECTROMECHANICAL DEVICES; SEMICONDUCTING SILICON; SENSORS; SILICON DETECTORS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS; VANADIUM; VANADIUM COMPOUNDS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 69549091578     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026523     Document Type: Article

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