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Volumn 80, Issue 3, 2009, Pages

Erratum: Shallow donor states near a semiconductor-insulator-metal interface (Physical Review B - Condensed Matter and Materials Physics (2009) 80 (035329) DOI: 10.1103/PhysRevB.80.035329);Shallow donor states near a semiconductor-insulator-metal interface

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EID: 69549084789     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.199904     Document Type: Erratum
Times cited : (22)

References (18)
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    • Kane, B.E.1
  • 11
    • 0000673655 scopus 로고
    • 10.1103/PhysRevB.40.12359
    • M. Kumagai and T. Takagahara, Phys. Rev. B 40, 12359 (1989). 10.1103/PhysRevB.40.12359
    • (1989) Phys. Rev. B , vol.40 , pp. 12359
    • Kumagai, M.1    Takagahara, T.2
  • 13
    • 84887217507 scopus 로고
    • 10.1119/1.1934950
    • R. Loudon, Am. J. Phys. 27, 649 (1959). 10.1119/1.1934950
    • (1959) Am. J. Phys. , vol.27 , pp. 649
    • Loudon, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.