Investigations of failure mechanisms at Ta and TaO diffusion barriers by secondary neutral mass spectrometry

Vacuum

Volumn 84, Issue 1, 2009, Pages 130-133

  Lakatos, A ^a   Csik, A ^b   Langer, G A ^a   Erdelyi, G ^a   Katona, G L ^a   Daroczi, L ^a   Vad, K ^b   Toth, J ^b   Beke, D L ^a  

^a UNIVERSITY OF DEBRECEN   (Hungary)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; BARRIER LAYERS; BI-LAYER; CAP LAYERS; COPPER FILMS; CU FILMS; CU METALLIZATION; DC MAGNETRON SPUTTERING; DIFFUSION PROPERTIES; FAILURE MECHANISM; HIGHLY INTEGRATED; IN-VACUUM; SECONDARY NEUTRAL MASS SPECTROMETRY; SOLID STATE ELECTRONICS; TA FILMS; THERMAL PROPERTIES; THERMAL STABILITY; THIN LAYERS; X- RAY DIFFRACTION;

CHEMICAL COMPOUNDS; CHEMICAL STABILITY; COPPER; DIFFUSION BARRIERS; ELECTRIC PROPERTIES; FILM GROWTH; INTEGRATED CIRCUITS; MASS SPECTROMETERS; MASS SPECTROMETRY; METALLIC FILMS; OXIDATION; PHASE INTERFACES; PHOTODEGRADATION; SYSTEM STABILITY; TANTALUM; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 69249202260     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.06.007     Document Type: Article

References (20)

1. Erdélyi G., Langer G., Nyéki J., Kövér L., Tomastik C., Werner W.S.M., et al. Thin Solid Films 459 (2004) 303-307
2. Hübner R., Hecker M., Mattern N., Hoffmann V., Wetzig K., Wenger C.H., et al. Thin Solid Films 458 (2004) 237-245
3. Hoo-Jeong L., Kee-Won K., Changsup R., and Sinclair R. Acta Materialia 47 (1999) 3965-3975
4. Stolt L., and d'Heurle F.M. Thin Solid Films 189 (1990) 269
5. Cros A., Aboelfotoh M.O., and Tu K.N. Journal of Applied Physiology 67 (1990) 3328
6. Fischer D., Scherg T., Bauer J.G., Schulze H.-J., and Wenzel C. Microelectronic Engineering 50 (2000) 459-464
7. Fang J.S., Hsu T.P., Ker M.L., Lee J.H., Hso C.S., and Yang L.C. Journal of Physics and Chemistry of Solids 69 (2008) 430-434
8. Moshfegh A.Z., and Akhavan O. Materials Science in Semiconductor Processing 6 4 (2003) 165-170
9. Lee Y.J., Suh B.S., and Park C.O. Thin Solid Films 357 (1999) 237-241
10. Zhao C., To{combining double acute accent}kei Z.S., Haider A., and Demuynck S. Microelectronic Engineering 84 (2007) 334
11. Kövér L., Varga D., Cserny I., Tóth J., and To{combining double acute accent}kési K. Surface and Interface Analysis 19 (1992) 9
12. Tóth J, Molnár GY, Varga D, Cserny I, Kövér L, Kiss J, et al. Book of abstr. TU-P-TDE 07. 9th ECASIA, 30 Sept.-5 Oct., 2001, Avignon, France, pp. 293.
13. Chen K., Nielsen M., Yang G.R., Rymaszewski E.J., and Lu T.M. Journal of Electronic Materials 26 (1997) 4
14. Chang P.H., and Liu H.Y. Thin Solid Films 258 (1995) 56-63
15. Müller K.H., and Oechsner H. Mikrochimica Acta (Wien) 10 Suppl. (1983) 51-60
16. Oechsner H. Nuclear Instruments and Methods in Physics Research B33 (1988) 918-925
17. Hübner R., Hecker M., Mattern N., Hoffmann V., Wetzig K., Wenger C.H., et al. Thin Solid Films 437 (2003) 248-256
18. Yuan Z.L., Zhang D.H., Li C.Y., Prasad K., and Tan C.M. Thin Solid Films 462-463 (2004) 284-287
19. Ezhilvalavan S., and Tseng T.Y. Thin Solid Films 360 (2000) 268-273
20. Lin J., Suzuki T., Matsunaga D., and Hieda K. Japanese Journal of Applied Physics 42 (2003) 7023-7024