Low Crystallization Temperature for Ta2O5 Thin Films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 11, 2003, Pages 7023-7024

  Lin, J ^a   Suzuki, T ^a   Matsunaga, D ^a   Hieda, K ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Catalytic effect; Crystallization; Forming gas anneal; Ru thin films; Ta2O5 thin films

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DATA STORAGE EQUIPMENT; LOW TEMPERATURE EFFECTS; RUTHENIUM; STOICHIOMETRY; TANTALUM COMPOUNDS;

HIGH-TEMPERATURE ANNEALING;

THIN FILMS;

EID: 1642495657     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7023     Document Type: Article

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